PROBING SEMICONDUCTOR SEMICONDUCTOR INTERFACES

被引：49

作者：

BAUER, RS

MARGARITONDO, G

机构：

[1] UNIV WISCONSIN,PHYS,MADISON,WI 53706

[2] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706

来源：

关键词：

D O I：

10.1063/1.881110

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：27 / 34

页数：8

共 26 条

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[26] PHOTOEMISSION DETERMINATION OF DIPOLE LAYER AND VB-DISCONTINUITY FORMATION DURING THE MBE GROWTH OF GAAS ON GE(110)
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