INP MIS TRANSISTORS WITH GROWN-IN SULFUR DIELECTRIC

被引：29

作者：

POST, G

DIMITRIOU, P

SCAVENNEC, A

DUHAMEL, N

MIRCEA, A

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 13期

关键词：

D O I：

10.1049/el:19830313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：459 / 461

页数：3

共 12 条

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IRVING, LD ;

WHITEHOUSE, CR ;

WOODWARD, J .

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[3]

COT L, 1981, 11TH EUR SOL STAT DE

[4] N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONS [J].

HENRY, L ;

LECROSNIER, D ;

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PAUGAM, J ;

PELOUS, G ;

RICHOU, F ;

SALVI, M .

ELECTRONICS LETTERS, 1982, 18 (02) :102-103

[5] ENHANCEMENT TYPE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH PLASMA ANODIC ALUMINUM-OXIDE AS THE GATE INSULATOR [J].

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PARK, HM ;

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SUGANO, T .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :712-713

[6]

ITOH T, 1982, P INT ELECTRON DEVIC, P7

[7]

KAWAKAMI T, 1980, P INT ELECTRON DEVIC, P445

[8] THE EFFECT OF INTERFACIAL TRAPS ON THE STABILITY OF INSULATED GATE DEVICES ON INP [J].

LILE, DL ;

TAYLOR, MJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :260-267

[9] INP HIGH MOBILITY ENHANCEMENT MISFETS USING ANODICALLY GROWN DOUBLE-LAYER GATE INSULATOR [J].

SAWADA, T ;

HASEGAWA, H .

ELECTRONICS LETTERS, 1982, 18 (17) :742-743

[10] SUBSTRATE EFFECTS ON PERFORMANCE OF INP MOSFETS [J].

WOODWARD, J ;

BROWN, GT ;

COCKAYNE, B ;

CAMERON, DC .

ELECTRONICS LETTERS, 1982, 18 (10) :415-417

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