CHEMICAL-STABILITY OF HF-TREATED SI(111) SURFACES

被引：55

作者：

YASAKA, T ^{[1
]}

KANDA, K ^{[1
]}

SAWARA, K ^{[1
]}

MIYAZAKI, S ^{[1
]}

HIROSE, M ^{[1
]}

机构：

[1] HIROSHIMA UNIV,INTEGRATED SYST RES CTR,HIROSHIMA 724,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

SILICON NATIVE OXIDE; HF-TREATED SILICON; HYDROGEN TERMINATION; X-RAY PHOTOELECTRON SPECTROSCOPY; FT-IR-ATR;

D O I：

10.1143/JJAP.30.3567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth kinetics of native oxide on Si(111) surfaces treated in pH-modified buffered HF (BHF) solutions has been systematically studied by angle-resolved X-ray photoelectron spectroscopy. A BHF-etched (pH = 5.3) Si(111) surface has no Si-F bonds and dose not oxidize for 300 min in clean room air. FT-IR-attenuated total reflection (ATR) measurements of Si-H bonds existing on the BHF-treated Si(111) surface have revealed that the surface is nearly step-free and atomically flat. This explains the chemical stability of the Si(111) surface.

引用

页码：3567 / 3569

页数：3

共 6 条

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