CHEMICAL-STABILITY OF HF-TREATED SI(111) SURFACES

被引:55
作者
YASAKA, T [1 ]
KANDA, K [1 ]
SAWARA, K [1 ]
MIYAZAKI, S [1 ]
HIROSE, M [1 ]
机构
[1] HIROSHIMA UNIV,INTEGRATED SYST RES CTR,HIROSHIMA 724,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期
关键词
SILICON NATIVE OXIDE; HF-TREATED SILICON; HYDROGEN TERMINATION; X-RAY PHOTOELECTRON SPECTROSCOPY; FT-IR-ATR;
D O I
10.1143/JJAP.30.3567
中图分类号
O59 [应用物理学];
学科分类号
摘要
Growth kinetics of native oxide on Si(111) surfaces treated in pH-modified buffered HF (BHF) solutions has been systematically studied by angle-resolved X-ray photoelectron spectroscopy. A BHF-etched (pH = 5.3) Si(111) surface has no Si-F bonds and dose not oxidize for 300 min in clean room air. FT-IR-attenuated total reflection (ATR) measurements of Si-H bonds existing on the BHF-treated Si(111) surface have revealed that the surface is nearly step-free and atomically flat. This explains the chemical stability of the Si(111) surface.
引用
收藏
页码:3567 / 3569
页数:3
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