STRAINED-LAYER INTERFACES BETWEEN II-VI COMPOUND SEMICONDUCTORS

被引：36

作者：

VAN DE WALLE, CG ^{[1
]}

SHAHZAD, K ^{[1
]}

OLEGO, DJ ^{[1
]}

机构：

[1] N AMER PHILIPS CORP, PHILIPS LABS, BRIARCLIFF MANOR, NY 10510 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584263

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1350 / 1353

页数：4

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