THE FREQUENCY-RESPONSE OF THE EFFECTIVE RESISTANCE OF THIN CHROMIUM AND TIN FILMS

被引：3

作者：

ANGADI, MA ^{[1
]}

UDACHAN, LA ^{[1
]}

机构：

[1] SB COLL SCI, DEPT PHYS, GULBARGA 585103, INDIA

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1985年 / 4卷 / 10期

关键词：

D O I：

10.1007/BF00723461

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1213 / 1216

页数：4

共 26 条

[1] CORRELATION OF THE STRUCTURE WITH ELECTRICAL AND OPTICAL-PROPERTIES OF THIN TIN FILMS [J].

ABOUSAIF, EA ;

MOHAMED, AA ;

ELKHODARY, MG .

THIN SOLID FILMS, 1982, 94 (02) :133-142

[2] THE EFFECT OF THE DEPOSITION RATE ON THE ELECTRICAL-RESISTIVITY OF THIN TIN FILMS [J].

ANGADI, MA ;

UDACHAN, LA .

THIN SOLID FILMS, 1981, 78 (03) :299-302

[3] THE FREQUENCY-RESPONSE OF THE EFFECTIVE RESISTANCE OF THIN PALLADIUM AND MANGANESE FILMS [J].

ANGADI, MA ;

SHIVAPRASAD, SM .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1983, 2 (05) :207-209

[4] THE EFFECT OF SUBSTRATE-TEMPERATURE ON THE ELECTRICAL-PROPERTIES OF THIN CHROMIUM FILMS [J].

ANGADI, MA ;

UDACHAN, LA .

JOURNAL OF MATERIALS SCIENCE, 1981, 16 (05) :1412-1415

[5] THE EFFECT OF DEPOSITION PARAMETERS ON THE ELECTRICAL-PROPERTIES OF THIN YTTERBIUM FILMS [J].

ANGADI, MA ;

ASHRIT, PV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1983, 77 (02) :685-692

[6] EFFECT OF DC AND AC ELECTRIC-FIELDS ON THE ELECTRICAL-RESISTANCE OF THIN SAMARIUM FILMS [J].

ANGADI, MA ;

ASHRIT, PV .

JOURNAL OF MATERIALS SCIENCE, 1981, 16 (12) :3513-3514

[7]

ANGADI MA, UNPUB

[8]

ANGADI MA, 1981, J PHYS D, V14, P181

[9] DC AND AC RESISTANCE OF MANGANESE AND MN-SIO THIN-FILMS [J].

CASTRO, EM ;

BEYNON, J .

THIN SOLID FILMS, 1980, 66 (02) :L21-L23

[10]

COUTTS TJ, 1974, ELECTRICAL CONDITION, P142

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