BACK CHANNEL UNIFORMITY OF THIN SIMOX WAFERS

被引：5

作者：

LIU, ST ^{[1
]}

ALLEN, LP ^{[1
]}

机构：

[1] IBIS CORP,DANVERS,MA 01923

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/23.124104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin top silicon layers ranging from 90-150 nm were prepared by oxidation and etch back of SIMOX wafers. These wafers were implanted at 200 keV with oxygen doses ranging from 1.8 x 10(18)cm-2 to 2.5 x 10(18) cm-2 followed by a high temperature anneal. The back channel threshold voltage uniformity of these undoped thin silicon SIMOX wafers was evaluated by a new point contact transistor technique. Differences in annealing ambients may be the source of improved back channel uniformity as observed by the point contact transistor characterization technique.

引用

页码：1271 / 1275

页数：5

共 15 条

[1] SUB-THRESHOLD BEHAVIOR OF UNIFORMLY AND NONUNIFORMLY DOPED LONG-CHANNEL MOSFET [J].