NONDESTRUCTIVE ANALYSIS OF SILICON-ON-INSULATOR WAFERS

被引：17

作者：

BUNKER, SN

SIOSHANSI, P

SANFACON, MM

TOBIN, SP

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 26期

关键词：

D O I：

10.1063/1.97680

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1900 / 1902

页数：3

共 14 条

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