MATERIALS MODIFICATION WITH ION-BEAMS

被引：115

作者：

WILLIAMS, JS

机构：

来源：

REPORTS ON PROGRESS IN PHYSICS | 1986年 / 49卷 / 05期

关键词：

D O I：

10.1088/0034-4885/49/5/001

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：491 / 587

页数：97

共 497 条

[81] SUPERSATURATED SOLID-SOLUTIONS AFTER SOLID-PHASE EPITAXIAL-GROWTH IN BI-IMPLANTED SILICON [J].

CAMPISANO, SU ;

RIMINI, E ;

BAERI, P ;

FOTI, G .

APPLIED PHYSICS LETTERS, 1980, 37 (02) :170-172

[82]

Carosella C.A., 1980, ION IMPLANTATION MET, P103

[83] A 2ND-ORDER EROSION SLOWNESS THEORY OF THE DEVELOPMENT OF SURFACE-TOPOGRAPHY BY ION-INDUCED SPUTTERING [J].

CARTER, G ;

NOBES, MJ ;

WEBB, RP .

JOURNAL OF MATERIALS SCIENCE, 1981, 16 (08) :2091-2102

[84]

CARTER G, 1977, ION IMPLANTATION SEM

[85]

Carter G., 1968, ION BOMBARDMENT SOLI

[86]

CARTER G, 1982, TOPICS APPLIED PHYSI, V47

[87]

Carter G., 1971, ION IMPLANTATION, P261

[88]

CARTER G, 1976, I PHYS C SER, V28

[89]

CHADDERTON LT, 1971, RADIAT EFF, V14, P271

[90] SILICIDE FORMATION BY HIGH-DOSE SI+-ION IMPLANTATION OF PD [J].

CHAPMAN, GE ;

LAU, SS ;

MATTESON, S ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6321-6327

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