OPTICAL AND ELECTRICAL-PROPERTIES OF PULSED LASER ANNEALED SILICON

被引：23

作者：

JELLISON, GE

机构：

来源：

SEMICONDUCTORS AND SEMIMETALS | 1984年 / 23卷

关键词：

D O I：

10.1016/S0080-8784(08)62436-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：95 / 164

页数：70

共 109 条

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