OPTICAL AND ELECTRICAL-PROPERTIES OF PULSED LASER ANNEALED SILICON

被引:23
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JELLISON, GE
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10.1016/S0080-8784(08)62436-9
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:95 / 164
页数:70
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共 109 条
[1]   DETERMINATION OF COMPLEX REFRACTIVE-INDEX PROFILES IN P+31 ION-IMPLANTED SILICON BY ELLIPSOMETRY [J].
ADAMS, JR ;
BASHARA, NM .
SURFACE SCIENCE, 1975, 49 (02) :441-458
[2]   SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].
ASPNES, DE ;
THEETEN, JB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1359-1365
[3]   DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA ;
KINSBRON, E .
PHYSICAL REVIEW B, 1984, 29 (02) :768-779
[4]  
ASPNES DE, 1980, J ELECTROCHEM SOC, V80, P414
[5]  
ASPNES DE, 1981, J VAC SCI TECHNOL, V18, P389
[6]  
BEER AC, 1963, SOLID STATE PHYSIC S, V4
[7]  
BENTINI GG, 1980, LASER ELECTRON BEAM, P272
[8]   HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J].
BENTON, JL ;
DOHERTY, CJ ;
FERRIS, SD ;
FLAMM, DL ;
KIMERLING, LC ;
LEAMY, HJ .
APPLIED PHYSICS LETTERS, 1980, 36 (08) :670-671
[9]  
BENTON JL, 1980, LASER ELECTRON BEAM, P430
[10]  
BENTON JL, 1979, LASER SOLID INTERACT, P543