ON THE AUGER INVERSE SENSITIVITY FACTORS OF IN AND SB IN INSB

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] AN AES EVALUATION OF CLEANING AND ETCHING METHODS FOR INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2752 - 2755

[3] AURET FD, 1982, UNPUB 29TH C S AFR I

[4] BARNARD WO, 1984, THESIS U PORT ELIZAB

[5] INTENSITY VARIATIONS IN AUGER-SPECTRA CAUSED BY DIFFRACTION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 304 - 306

[6] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J]. SURFACE SCIENCE, 1975, 48 (01) : 9 - 21

[7] CHANG CC, 1974, CHARACTERIZATION SOL, pCH20

[8] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[9] SURFACE RECOMBINATION IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +

[10] COMMENT ON POLARITY EFFECTS IN INSB-ALLOYED P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2967 - &

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] AN AES EVALUATION OF CLEANING AND ETCHING METHODS FOR INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2752 - 2755

[3] AURET FD, 1982, UNPUB 29TH C S AFR I

[4] BARNARD WO, 1984, THESIS U PORT ELIZAB

[5] INTENSITY VARIATIONS IN AUGER-SPECTRA CAUSED BY DIFFRACTION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 304 - 306

[6] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J]. SURFACE SCIENCE, 1975, 48 (01) : 9 - 21

[7] CHANG CC, 1974, CHARACTERIZATION SOL, pCH20

[8] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[9] SURFACE RECOMBINATION IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +

[10] COMMENT ON POLARITY EFFECTS IN INSB-ALLOYED P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2967 - &