HOPPING CONDUCTION IN DOPED SILICON - THE APPARENT ABSENCE OF QUANTUM INTERFERENCE

被引：11

作者：

DAI, PH

FRIEDMAN, JR

SARACHIK, MP

机构：

[1] Physics Department, City College of the City University of New York, New York

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.48.4875

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A negative magnetoconductance is found for insulating, uncompensated n-type Si:P and Si:As, uncompensated p-type Si:B, and compensated Si:P,B at temperatures between 1.6 and 4.2 K. The positive component expected for quantum interference in the hopping regime is absent or undetectably small in all these Si-based semiconductors even in magnetic fields as small as 200 G.

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页码：4875 / 4878

页数：4

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