STACKING-FAULT STRUCTURES IN CARBON-CONTAMINATED LOW-TEMPERATURE EPITAXIAL SILICON

被引：10

作者：

OGDEN, R

BRADLEY, RR

WATTS, BE

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,CASWELL,NORTHAMPTONSHIR,ENGLAND

[2] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 26卷 / 01期

关键词：

D O I：

10.1002/pssa.2210260112

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：135 / 146

页数：12

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