REFLECTION ELECTRON-MICROSCOPE STUDY OF THE INITIAL-STAGES OF OXIDATION OF SI(111)-7 X 7 SURFACES

[1] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI [J]. PHYSICAL REVIEW B, 1979, 19 (08): : 3944 - 3956

[2] INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4122 - 4127

[3] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J]. PHYSICAL REVIEW B, 1974, 10 (02): : 710 - 718

[4] IBACH H, 1973, SURFACE SCI, V38, P435

[5] KAUPKE N, 1980, SURFACE SCI, V92, P407

[6] PULSED LASER ATOM-PROBE STUDY OF CLEAN AND OXYGEN-COVERED SILICON [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 186 - 195

[7] HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 437 - 439

[8] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 2089 - &

[9] OSAKABE N, 1981, SURF SCI, V102, P424, DOI 10.1016/0039-6028(81)90038-8

[10] DIRECT OBSERVATION OF THE PHASE-TRANSITION BETWEEN THE (7X7) AND (1X1) STRUCTURES OF CLEAN (111) SILICON SURFACES [J]. SURFACE SCIENCE, 1981, 109 (02) : 353 - 366

[1] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI [J]. PHYSICAL REVIEW B, 1979, 19 (08): : 3944 - 3956

[2] INFLUENCE OF OXIDATION PARAMETERS ON ATOMIC ROUGHNESS AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4122 - 4127

[3] ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J]. PHYSICAL REVIEW B, 1974, 10 (02): : 710 - 718

[4] IBACH H, 1973, SURFACE SCI, V38, P435

[5] KAUPKE N, 1980, SURFACE SCI, V92, P407

[6] PULSED LASER ATOM-PROBE STUDY OF CLEAN AND OXYGEN-COVERED SILICON [J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 186 - 195

[7] HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 437 - 439

[8] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) : 2089 - &

[9] OSAKABE N, 1981, SURF SCI, V102, P424, DOI 10.1016/0039-6028(81)90038-8

[10] DIRECT OBSERVATION OF THE PHASE-TRANSITION BETWEEN THE (7X7) AND (1X1) STRUCTURES OF CLEAN (111) SILICON SURFACES [J]. SURFACE SCIENCE, 1981, 109 (02) : 353 - 366