THEORY OF 2ND-HARMONIC GENERATION AT SEMICONDUCTOR SURFACES

被引：17

作者：

CINI, M ^{[1
]}

DELSOLE, R ^{[1
]}

REINING, L ^{[1
]}

机构：

[1] UNIV PARIS 11,CTR EUROPEEN CALCUL ATOM & MOLEC,F-91405 ORSAY,FRANCE

来源：

SURFACE SCIENCE | 1993年 / 287卷

关键词：

D O I：

10.1016/0039-6028(93)91055-T

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We outline a method to determine the intensity of the second harmonic emitted from a semiconductor surface. Calculations have been carried out for Si(111)/As and compared with second-harmonic generation experiments carried out on the same surface.

引用

页码：693 / 698

页数：6

共 9 条

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