STRUCTURAL COMPROMISE OF THE ARSENIC-TERMINATED SILICON (111) SURFACE

被引：21

作者：

PATTERSON, CH ^{[1
]}

MESSMER, RP ^{[1
]}

机构：

[1] GE,CTR CORP RES & DEV,SCHENECTADY,NY 12301

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.39.1372

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1372 / 1374

页数：3

共 12 条

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[10] ELECTRONIC-STRUCTURE, ATOMIC-STRUCTURE, AND THE PASSIVATED NATURE OF THE ARSENIC-TERMINATED SI(111) SURFACE
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