DEGRADATION STUDIES OF PROTON-IMPLANTED VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：8

作者：

CHENG, YM ^{[1
]}

HERRICK, RW ^{[1
]}

PETROFF, PM ^{[1
]}

HIBBSBRENNER, MK ^{[1
]}

MORGAN, RA ^{[1
]}

机构：

[1] HONEYWELL TECHNOL CTR,PLYMOUTH,MN 55441

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 12期

关键词：

D O I：

10.1063/1.115044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We analyze the degradation process of proton-implanted, top-emitting vertical cavity surface emitting lasers using cross-sectional cathodoluminescence. The spatially resolved luminescence characteristics of the active regions, and p- and n-distributed Bragg reflector(DBR) mirrors before and after degradation of the devices are presented. Degradation has been observed not only in the active regions, but also remarkably in the p-DBR mirror stacks. We show that a significant minority carrier population is present in the p mirror under normal operating conditions to drive the degradation observed in the p mirror. (C) 1995 American Institute of Physics.

引用

页码：1648 / 1650

页数：3

共 13 条

[1] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV [J].