DEEP LEVEL, QUENCHED-IN DEFECTS IN SILICON DOPED WITH GOLD, SILVER, IRON, COPPER OR NICKEL

被引：85

作者：

TAVENDALE, AJ

PEARTON, SJ

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 09期

关键词：

D O I：

10.1088/0022-3719/16/9/011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1665 / 1673

页数：9

共 18 条

[1] MOBILITY OF RADIATION-INDUCED DEFECTS IN GERMANIUM
BARUCH, P
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) : 653 - &
[2] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON
BENTON, JL
DOHERTY, CJ
FERRIS, SD
FLAMM, DL
KIMERLING, LC
LEAMY, HJ
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (08) : 670 - 671
[3] ENERGY-LEVELS IN SILICON
CHEN, JW
MILNES, AG
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228
[4] DORIN VA, 1981, SOV PHYS SEMICOND, V14, P927
[5] EVWARAYE AO, 1979, I PHYS C SER, V46, P533
[6] QUENCHED-IN DEFECT IN BORON-DOPED SILICON
GERSON, JD
CHENG, LJ
CORBETT, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4821 - 4822
[7] THE PROPERTIES OF IRON IN SILICON
GRAFF, K
PIEPER, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : 669 - 674
[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[9] COMPLEX NATURE OF GOLD-RELATED DEEP LEVELS IN SILICON
LANG, DV
GRIMMEISS, HG
MEIJER, E
JAROS, M
[J]. PHYSICAL REVIEW B, 1980, 22 (08): : 3917 - 3934
[10] LEE YH, 1979, I PHYS C SERIES, V46, P521