CARRIER SATURATION IN TIN-DOPED INP FILMS GROWN BY LIQUID-PHASE EPITAXY

被引：5

作者：

CHIN, BH

FRAHM, RE

SHENG, TT

BONNER, WA

机构：

来源：

关键词：

D O I：

10.1149/1.2115849

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1373 / 1374

页数：2

共 14 条

[1] BE DOPING OF LIQUID-PHASE-EPITAXIAL INP
ABRAMS, EB
SUMSKI, S
BONNER, WA
COLEMAN, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4469 - 4470
[2] AKITA K, 1981, ELECTRON LETT, V24, P921
[3] ANTYPAS GA, 1977, I PHYSICS C SERIES, V336, P96
[4] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH
ASTLES, MG
SMITH, FGH
WILLIAMS, EW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1750 - 1757
[5] FRAHM R, UNPUB
[6] LPE-GROWTH OF INP ON GAAS
JACOBS, B
BUTTER, E
DOBNER, B
[J]. KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (04): : 383 - 387
[7] PREPARATION AND CHARACTERIZATION OF LPE INP
KUPHAL, E
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) : 117 - 126
[8] ELECTRICAL-PROPERTIES OF LIQUID-PHASE EPITAXIAL INP GROWN FROM TIN SOLUTION
NEUMANN, H
JACOBS, B
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (02): : K139 - K144
[9] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M
POLLACK, MA
NAHORY, RE
DEWINTER, JC
BALLMAN, AA
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (04) : 314 - 316
[10] ROSZTOCZY FE, 1971, I PHYS C SER, V9, P86