FABRICATION OF 0.25-MU-M PATTERNS ON A MEMBRANE SUBSTRATE-BASED X-RAY ABSORBER

被引：7

作者：

FUJINO, T ^{[1
]}

HASHIMOTO, M ^{[1
]}

YOSHIOKA, N ^{[1
]}

MORIIZUMI, K ^{[1
]}

SATOU, T ^{[1
]}

MORIMOTO, H ^{[1
]}

WATAKABE, Y ^{[1
]}

机构：

[1] MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11B期

关键词：

X-RAY MASK; ELECTRON BEAM LITHOGRAPHY; PROXIMITY EFFECT CORRECTION; DRY ETCHING; MEMBRANE HEATING; TRILAYER PROCESS;

D O I：

10.1143/JJAP.30.3058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray mask fabrication techniques, which are used in X-ray lithography for 0.25-mu-m devices, are studied in this paper. Initially, the process latitude for both the single- and trilayer processes is discussed according to the simulation results. The bottom layer thickness in the trilayer process was optimized to reduce the influence of backscattered electrons, and a proximity effect correction was introduced for the 0.25-mu-m pattern fabrication. In order to suppress membrane heating, a reverse-side polyvinyl alcohol (PVA) coating method was developed. The temperature was monitored with a special thermometer, and the effectiveness of the PVA coating was examined.

引用

页码：3058 / 3064

页数：7

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