ON THE SIMS DEPTH PROFILING ANALYSIS - REDUCTION OF MATRIX EFFECT

被引:39
作者
GAO, Y
MARIE, Y
SALDI, F
MIGEON, HN
机构
[1] Laboratoire d'Analyse des Matériaux, Centre de Recherche Public-Centre Universitaire, L-1511 Luxembourg, 162a, avenue de la Faiencerie
来源
INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES | 1995年 / 143卷
关键词
SIMS; REDUCTION OF MATRIX EFFECT; DEPTH PROFILES; MA(+) TECHNIQUE; INTERFACES; ENERGY DISCRIMINATION TECHNIQUE; MATRIX EFFECT;
D O I
10.1016/0168-1176(94)04113-L
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
We present several techniques to reduce the matrix effect which hampers the quantification and the interpretation of SIMS analysis, particularly for the interface regions. We emphasise the MCs(+) technique (M, element to be analysed) which is one of the most useful and promising techniques. This technique is extended to MCs(2)(+) which can be used to detect the electronegative elements with high sensitivity. Moreover, the use of other alkali primary ions such as K+, instead of Cs+, is investigated. Very similar cationisation behaviour of K+ is found, making MK(+) ions have a weak matrix effect. The advantages of using MK(+), which is complementary to MCs(+), are presented. In addition, some other techniques to reduce the matrix effect are presented and compared with the MCs(+) technique.
引用
收藏
页码:11 / 18
页数:8
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