SECONDARY ION MASS-SPECTROMETRY QUANTIFICATION OF BE IN ALXGA1-XAS/GAAS MULTILAYER STRUCTURES

被引：8

作者：

GAO, Y

HARMAND, JC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.575018

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2243 / 2247

页数：5

共 13 条

[1] ADSORPTION OF GASES STUDIED BY SECONDARY ION EMISSION MASS-SPECTROMETRY [J].

BLAISE, G ;

BERNHEIM, M .

SURFACE SCIENCE, 1975, 47 (01) :324-343

[2]

CRANK J, 1975, MATH DIFFUSION, P39

[3] MECHANISM OF SIMS MATRIX EFFECT [J].

DELINE, VR ;

KATZ, W ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 33 (09) :832-835

[4] OXIDE BOND-ENERGIES FOR THE CALIBRATION OF MATRIX EFFECTS IN SECONDARY ION MASS-SPECTROMETRY [J].

GALUSKA, AA ;

MORRISON, GH .

INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1984, 61 (01) :59-70

[5] MATRIX CALIBRATION FOR THE QUANTITATIVE-ANALYSIS OF LAYERED SEMICONDUCTORS BY SECONDARY ION MASS-SPECTROMETRY [J].

GALUSKA, AA ;

MORRISON, GH .

ANALYTICAL CHEMISTRY, 1983, 55 (13) :2051-2055

[6] FRACTIONAL SECONDARY ION YIELDS OF BE, ZN, CR AND SI IN INP, GAINAS AND GA1-XALXAS [J].

GAUNEAU, M ;

CHAPLAIN, R ;

SALVI, M ;

DUHAMEL, N .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) :180-182

[7]

GAUNEAU M, 1984, J MICROSC SPECT ELEC, V9, P451

[8] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

ILEGEMS, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1278-1287

[9] ULTRAHIGH DOPING LEVELS OF GAAS WITH BERYLLIUM BY MOLECULAR-BEAM EPITAXY [J].

LIEVIN, JL ;

ALEXANDRE, F .

ELECTRONICS LETTERS, 1985, 21 (10) :413-414

[10] MATRIX EFFECT AND SURFACE OXIDATION IN DEPTH PROFILING OF ALXGA1-XAS BY SECONDARY ION MASS-SPECTROMETRY USING O-2+ PRIMARY IONS [J].

MEYER, C ;

MAIER, M ;

BIMBERG, D .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2672-2676

← 1 2 →