MATRIX EFFECT AND SURFACE OXIDATION IN DEPTH PROFILING OF ALXGA1-XAS BY SECONDARY ION MASS-SPECTROMETRY USING O-2+ PRIMARY IONS

被引：13

作者：

MEYER, C

MAIER, M

BIMBERG, D

机构：

[1] RHEIN WESTFAL TH AACHEN,SONDERFORSCH BEREICH 202,BASISLAB,D-5100 AACHEN,FED REP GER

[2] TECH UNIV BERLIN,INST FESTKORPERPHYS,D-1000 BERLIN 12,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.332342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2672 / 2676

页数：5

共 17 条

[1] QUANTITATIVE-ANALYSIS OF ALXGA1-XAS BY AUGER-ELECTRON SPECTROSCOPY [J].

ARTHUR, JR ;

LEPORE, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :979-984

[2] PLASMA-GROWN OXIDE ON GAAS - SEMI-QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].

CHANG, CC ;

CHANG, RPH ;

MURARKA, SP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :481-487

[3] MECHANISM OF SIMS MATRIX EFFECT [J].

DELINE, VR ;

KATZ, W ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 33 (09) :832-835

[4] MATRIX EFFECTS IN QUANTITATIVE AUGER ANALYSIS OF DILUTE ALLOYS [J].

HALL, PM ;

MORABITO, JM .

SURFACE SCIENCE, 1979, 83 (02) :391-405

[5] USE OF ION-BEAM TECHNIQUES TO CHARACTERIZE THIN PLASMA GROWN GAAS AND GAALAS OXIDE-FILMS [J].

KAUFFMAN, RL ;

FELDMAN, LC ;

CHANG, RPH .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :619-622

[6] ON THE PROBLEM OF WHETHER MASS OR CHEMICAL BONDING IS MORE IMPORTANT TO BOMBARDMENT-INDUCED COMPOSITIONAL CHANGES IN ALLOYS AND OXIDES [J].

KELLY, R .

SURFACE SCIENCE, 1980, 100 (01) :85-107

[7] EFFECTS OF ION SPUTTERING ON SEMICONDUCTOR SURFACES [J].

MCGUIRE, GE .

SURFACE SCIENCE, 1978, 76 (01) :130-147

[8] EFFECT OF OXYGEN IMPLANTATION UPON SECONDARY ION YIELDS [J].

MORGAN, AE ;

DEGREFTE, HAM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :164-168

[9] ANODIC-OXIDATION OF GAAS AS A TECHNIQUE TO EVALUATE ELECTRICAL CARRIER CONCENTRATION PROFILES [J].

MULLER, H ;

EISEN, FH ;

MAYER, JW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :651-655

[10] AN AES-SIMS STUDY OF SILICON OXIDATION INDUCED BY ION OR ELECTRON-BOMBARDMENT [J].

REUTER, W ;

WITTMAACK, K .

APPLICATIONS OF SURFACE SCIENCE, 1980, 5 (03) :221-242

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