EFFECT OF OXYGEN IMPLANTATION UPON SECONDARY ION YIELDS

被引：16

作者：

MORGAN, AE ^{[1
]}

DEGREFTE, HAM ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 MD EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 02期

关键词：

D O I：

10.1116/1.570716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：164 / 168

页数：5

共 18 条

[1] SURFACE CESIUM CONCENTRATIONS IN CESIUM-ION-BOMBARDED ELEMENTAL AND COMPOUND TARGETS [J].

CHELGREN, JE ;

KATZ, W ;

DELINE, VR ;

EVANS, CA ;

BLATTNER, RJ ;

WILLIAMS, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :324-327

[2]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[3] MECHANISM OF SIMS MATRIX EFFECT [J].

DELINE, VR ;

KATZ, W ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 33 (09) :832-835

[4] UNIFIED EXPLANATION FOR SECONDARY ION YIELDS [J].

DELINE, VR ;

EVANS, CA ;

WILLIAMS, P .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :578-580

[5]

Morgan A. E., 1980, Surface and Interface Analysis, V2, P123, DOI 10.1002/sia.740020402

[6] QUANTITATIVE SIMS STUDIES WITH A URANIUM MATRIX [J].

MORGAN, AE ;

WERNER, HW .

SURFACE SCIENCE, 1977, 65 (02) :687-699

[7] QUANTITATIVE-ANALYSIS OF LOW-ALLOY STEELS BY SECONDARY ION MASS-SPECTROMETRY [J].

MORGAN, AE ;

WERNER, HW .

ANALYTICAL CHEMISTRY, 1976, 48 (04) :699-708

[8] TEST OF A QUANTITATIVE APPROACH TO SECONDARY ION MASS-SPECTROMETRY ON GLASS AND SILICATE STANDARDS [J].

MORGAN, AE ;

WERNER, HW .

ANALYTICAL CHEMISTRY, 1977, 49 (07) :927-931

[9] PREDICTION OF SECONDARY ION CURRENTS FOR TRACE-ELEMENTS IN GALLIUM-ARSENIDE IN SECONDARY ION MASS-SPECTROMETRY [J].

MORGAN, AE ;

CLEGG, JB .

SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1980, 35 (05) :281-285

[10]

MORGAN AE, 1978, MIKROCHIM ACTA, V2, P31

← 1 2 →