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AN AES-SIMS STUDY OF SILICON OXIDATION INDUCED BY ION OR ELECTRON-BOMBARDMENT

被引：95
作者：
REUTER, W
WITTMAACK, K
机构：
来源：
APPLICATIONS OF SURFACE SCIENCE | 1980年 / 5卷 / 03期
关键词：
D O I：
10.1016/0378-5963(80)90063-X
中图分类号：
学科分类号：
摘要：
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页码：221 / 242
页数：22
相关论文
共 67 条
  • [1] ANDERSEN CA, 1969, INT J MASS SPECTROM, V2, P61
  • [2] DEPTH RESOLUTION OF SPUTTER PROFILING
    ANDERSEN, HH
    [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140
  • [3] DIE POSITIVE SEKUNDARIONENEMISSION VON SAUERSTOFFBEDECKTEN METALLEN
    BENNINGHOVEN, A
    [J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1967, A 22 (05): : 841 - +
  • [4] COMPARATIVE STUDY OF SI(111), SILICON-OXIDE, SIC AND SI3N4 SURFACES BY SECONDARY ION MASS-SPECTROSCOPY (SIMS)
    BENNINGHOVEN, A
    SICHTERMANN, W
    STORP, S
    [J]. THIN SOLID FILMS, 1975, 28 (01) : 59 - 64
  • [5] QUASI-SIMULTANEOUS SIMS-AES-XPS INVESTIGATION OF OXIDATION OF TI IN MONOLAYER RANGE
    BENNINGHOVEN, A
    BISPINCK, H
    GANSCHOW, O
    WIEDMANN, L
    [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 341 - 343
  • [6] ADSORPTION OF GASES STUDIED BY SECONDARY ION EMISSION MASS-SPECTROMETRY
    BLAISE, G
    BERNHEIM, M
    [J]. SURFACE SCIENCE, 1975, 47 (01) : 324 - 343
  • [7] IMPLICATIONS IN THE USE OF SPUTTERING FOR LAYER REMOVAL - SYSTEM AU ON SI
    BLANK, P
    WITTMAACK, K
    [J]. RADIATION EFFECTS LETTERS, 1979, 43 (03): : 105 - 110
  • [8] STUDY OF CHARGING AND DISSOCIATION OF SIO2 SURFACES BY AES
    CARRIERE, B
    LANG, B
    [J]. SURFACE SCIENCE, 1977, 64 (01) : 209 - 223
  • [9] EARLY STAGES OF OXYGEN-ADSORPTION ON SILICON SURFACES AS SEEN BY ELECTRON-SPECTROSCOPY
    CARRIERE, B
    DEVILLE, JP
    [J]. SURFACE SCIENCE, 1979, 80 (01) : 278 - 286
  • [10] Castaing R., 1962, J MICROSCOPIE, V1, P395
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