FRACTIONAL SECONDARY ION YIELDS OF BE, ZN, CR AND SI IN INP, GAINAS AND GA1-XALXAS

被引：5

作者：

GAUNEAU, M ^{[1
]}

CHAPLAIN, R ^{[1
]}

SALVI, M ^{[1
]}

DUHAMEL, N ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,PMS PAB,F-92220 BAGNEUX,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期

关键词：

D O I：

10.1016/0168-583X(86)90279-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：180 / 182

页数：3

共 8 条

[1] MECHANISM OF SIMS MATRIX EFFECT [J].

DELINE, VR ;

KATZ, W ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 33 (09) :832-835

[2] OXIDE BOND-ENERGIES FOR THE CALIBRATION OF MATRIX EFFECTS IN SECONDARY ION MASS-SPECTROMETRY [J].

GALUSKA, AA ;

MORRISON, GH .

INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1984, 61 (01) :59-70

[3] MATRIX CALIBRATION FOR THE QUANTITATIVE-ANALYSIS OF LAYERED SEMICONDUCTORS BY SECONDARY ION MASS-SPECTROMETRY [J].

GALUSKA, AA ;

MORRISON, GH .

ANALYTICAL CHEMISTRY, 1983, 55 (13) :2051-2055

[4] MATRIX EFFECT AND SURFACE OXIDATION IN DEPTH PROFILING OF ALXGA1-XAS BY SECONDARY ION MASS-SPECTROMETRY USING O-2+ PRIMARY IONS [J].

MEYER, C ;

MAIER, M ;

BIMBERG, D .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2672-2676

[5] POSITIVE SECONDARY-ION EMISSION FROM FE-NI ALLOYS UNDER O-2+ BOMBARDMENT AT 45-DEGREES INCIDENCE [J].

REUTER, W ;

YU, ML .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3784-3786

[6]

SLODZIAN G, 1981, 3RD P INT C SEC ION, P115

[7] OXYGEN-CONCENTRATION DEPENDENCE OF SECONDARY ION YIELD ENHANCEMENT [J].

WITTMAACK, K .

SURFACE SCIENCE, 1981, 112 (1-2) :168-180

[8] SECONDARY ION EMISSION FROM BINARY ALLOY SYSTEMS .1. O-2(+) BOMBARDMENT [J].

YU, ML ;

REUTER, W .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1478-1488

← 1 →