学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
OXYGEN-CONCENTRATION DEPENDENCE OF SECONDARY ION YIELD ENHANCEMENT
被引:135
作者
:
WITTMAACK, K
论文数:
0
引用数:
0
h-index:
0
WITTMAACK, K
机构
:
来源
:
SURFACE SCIENCE
|
1981年
/ 112卷
/ 1-2期
关键词
:
D O I
:
10.1016/0039-6028(81)90340-X
中图分类号
:
O64 [物理化学(理论化学)、化学物理学];
学科分类号
:
070304 ;
081704 ;
摘要
:
引用
收藏
页码:168 / 180
页数:13
相关论文
共 43 条
[1]
ANDERSEN CA, 1969, INT J MASS SPECTROM, V2, P61
[2]
DEVELOPMENTS IN SECONDARY ION MASS-SPECTROSCOPY AND APPLICATIONS TO SURFACE STUDIES
[J].
BENNINGHOVEN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNSTER,PHYSIKAL INST,D-44 MUNSTER,FED REP GER
UNIV MUNSTER,PHYSIKAL INST,D-44 MUNSTER,FED REP GER
BENNINGHOVEN, A
.
SURFACE SCIENCE,
1975,
53
(DEC)
:596
-625
[3]
COMPARATIVE STUDY OF SI(111), SILICON-OXIDE, SIC AND SI3N4 SURFACES BY SECONDARY ION MASS-SPECTROSCOPY (SIMS)
[J].
BENNINGHOVEN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
BENNINGHOVEN, A
;
SICHTERMANN, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
SICHTERMANN, W
;
STORP, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
STORP, S
.
THIN SOLID FILMS,
1975,
28
(01)
:59
-64
[4]
OBSERVATION ON SURFACE-REACTIONS WITH STATIC METHOD OF SECONDARY ION MASS-SPECTROMETRY .1. METHOD
[J].
BENNINGHOVEN, A
论文数:
0
引用数:
0
h-index:
0
BENNINGHOVEN, A
.
SURFACE SCIENCE,
1971,
28
(02)
:541
-+
[5]
SURFACE INVESTIGATION OF SOLIDS BY STATICAL METHOD OF SECONDARY ION MASS SPECTROSCOPY (SIMS)
[J].
BENNINGHOVEN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE, PHYS INST 1, COLOGNE 5, WEST GERMANY
UNIV COLOGNE, PHYS INST 1, COLOGNE 5, WEST GERMANY
BENNINGHOVEN, A
.
SURFACE SCIENCE,
1973,
35
(01)
:427
-457
[6]
QUASI-SIMULTANEOUS SIMS-AES-XPS INVESTIGATION OF OXIDATION OF TI IN MONOLAYER RANGE
[J].
BENNINGHOVEN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
BENNINGHOVEN, A
;
BISPINCK, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
BISPINCK, H
;
GANSCHOW, O
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
GANSCHOW, O
;
WIEDMANN, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
WIEDMANN, L
.
APPLIED PHYSICS LETTERS,
1977,
31
(05)
:341
-343
[7]
SIMILARITIES IN PHOTON AND ION EMISSIONS INDUCED BY SPUTTERING
[J].
BLAISE, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11,PHYS SOLIDES LAB,F-91405 ORSAY,FRANCE
UNIV PARIS 11,PHYS SOLIDES LAB,F-91405 ORSAY,FRANCE
BLAISE, G
.
SURFACE SCIENCE,
1976,
60
(01)
:65
-75
[8]
ADSORPTION OF GASES STUDIED BY SECONDARY ION EMISSION MASS-SPECTROMETRY
[J].
BLAISE, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS S, LAB PHYS SOLIDES, BAT 510, 91405 ORSAY, FRANCE
UNIV PARIS S, LAB PHYS SOLIDES, BAT 510, 91405 ORSAY, FRANCE
BLAISE, G
;
BERNHEIM, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS S, LAB PHYS SOLIDES, BAT 510, 91405 ORSAY, FRANCE
UNIV PARIS S, LAB PHYS SOLIDES, BAT 510, 91405 ORSAY, FRANCE
BERNHEIM, M
.
SURFACE SCIENCE,
1975,
47
(01)
:324
-343
[9]
COMPARATIVE EFFECTS OF OXYGEN ON ION EMISSION AND SURFACE POTENTIAL OF METALS
[J].
BLAISE, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11,CNRS,LAB PHYS SOLIDES,BAT 510,91405 ORSAY,FRANCE
UNIV PARIS 11,CNRS,LAB PHYS SOLIDES,BAT 510,91405 ORSAY,FRANCE
BLAISE, G
;
SLODZIAN, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11,CNRS,LAB PHYS SOLIDES,BAT 510,91405 ORSAY,FRANCE
UNIV PARIS 11,CNRS,LAB PHYS SOLIDES,BAT 510,91405 ORSAY,FRANCE
SLODZIAN, G
.
SURFACE SCIENCE,
1973,
40
(03)
:708
-714
[10]
ENERGY AND FLUENCE DEPENDENCE OF THE SPUTTERING YIELD OF SILICON BOMBARDED WITH ARGON AND XENON
[J].
BLANK, P
论文数:
0
引用数:
0
h-index:
0
机构:
GESELLS STRAHLEN & UMWELTFORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER
GESELLS STRAHLEN & UMWELTFORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER
BLANK, P
;
WITTMAACK, K
论文数:
0
引用数:
0
h-index:
0
机构:
GESELLS STRAHLEN & UMWELTFORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER
GESELLS STRAHLEN & UMWELTFORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER
WITTMAACK, K
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(03)
:1519
-1528
←
1
2
3
4
5
→
共 43 条
[1]
ANDERSEN CA, 1969, INT J MASS SPECTROM, V2, P61
[2]
DEVELOPMENTS IN SECONDARY ION MASS-SPECTROSCOPY AND APPLICATIONS TO SURFACE STUDIES
[J].
BENNINGHOVEN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNSTER,PHYSIKAL INST,D-44 MUNSTER,FED REP GER
UNIV MUNSTER,PHYSIKAL INST,D-44 MUNSTER,FED REP GER
BENNINGHOVEN, A
.
SURFACE SCIENCE,
1975,
53
(DEC)
:596
-625
[3]
COMPARATIVE STUDY OF SI(111), SILICON-OXIDE, SIC AND SI3N4 SURFACES BY SECONDARY ION MASS-SPECTROSCOPY (SIMS)
[J].
BENNINGHOVEN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
BENNINGHOVEN, A
;
SICHTERMANN, W
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
SICHTERMANN, W
;
STORP, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
STORP, S
.
THIN SOLID FILMS,
1975,
28
(01)
:59
-64
[4]
OBSERVATION ON SURFACE-REACTIONS WITH STATIC METHOD OF SECONDARY ION MASS-SPECTROMETRY .1. METHOD
[J].
BENNINGHOVEN, A
论文数:
0
引用数:
0
h-index:
0
BENNINGHOVEN, A
.
SURFACE SCIENCE,
1971,
28
(02)
:541
-+
[5]
SURFACE INVESTIGATION OF SOLIDS BY STATICAL METHOD OF SECONDARY ION MASS SPECTROSCOPY (SIMS)
[J].
BENNINGHOVEN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV COLOGNE, PHYS INST 1, COLOGNE 5, WEST GERMANY
UNIV COLOGNE, PHYS INST 1, COLOGNE 5, WEST GERMANY
BENNINGHOVEN, A
.
SURFACE SCIENCE,
1973,
35
(01)
:427
-457
[6]
QUASI-SIMULTANEOUS SIMS-AES-XPS INVESTIGATION OF OXIDATION OF TI IN MONOLAYER RANGE
[J].
BENNINGHOVEN, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
BENNINGHOVEN, A
;
BISPINCK, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
BISPINCK, H
;
GANSCHOW, O
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
GANSCHOW, O
;
WIEDMANN, L
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
UNIV MUENSTER,INST PHYSIKAL,D-4400 MUENSTER,FED REP GER
WIEDMANN, L
.
APPLIED PHYSICS LETTERS,
1977,
31
(05)
:341
-343
[7]
SIMILARITIES IN PHOTON AND ION EMISSIONS INDUCED BY SPUTTERING
[J].
BLAISE, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11,PHYS SOLIDES LAB,F-91405 ORSAY,FRANCE
UNIV PARIS 11,PHYS SOLIDES LAB,F-91405 ORSAY,FRANCE
BLAISE, G
.
SURFACE SCIENCE,
1976,
60
(01)
:65
-75
[8]
ADSORPTION OF GASES STUDIED BY SECONDARY ION EMISSION MASS-SPECTROMETRY
[J].
BLAISE, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS S, LAB PHYS SOLIDES, BAT 510, 91405 ORSAY, FRANCE
UNIV PARIS S, LAB PHYS SOLIDES, BAT 510, 91405 ORSAY, FRANCE
BLAISE, G
;
BERNHEIM, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS S, LAB PHYS SOLIDES, BAT 510, 91405 ORSAY, FRANCE
UNIV PARIS S, LAB PHYS SOLIDES, BAT 510, 91405 ORSAY, FRANCE
BERNHEIM, M
.
SURFACE SCIENCE,
1975,
47
(01)
:324
-343
[9]
COMPARATIVE EFFECTS OF OXYGEN ON ION EMISSION AND SURFACE POTENTIAL OF METALS
[J].
BLAISE, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11,CNRS,LAB PHYS SOLIDES,BAT 510,91405 ORSAY,FRANCE
UNIV PARIS 11,CNRS,LAB PHYS SOLIDES,BAT 510,91405 ORSAY,FRANCE
BLAISE, G
;
SLODZIAN, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV PARIS 11,CNRS,LAB PHYS SOLIDES,BAT 510,91405 ORSAY,FRANCE
UNIV PARIS 11,CNRS,LAB PHYS SOLIDES,BAT 510,91405 ORSAY,FRANCE
SLODZIAN, G
.
SURFACE SCIENCE,
1973,
40
(03)
:708
-714
[10]
ENERGY AND FLUENCE DEPENDENCE OF THE SPUTTERING YIELD OF SILICON BOMBARDED WITH ARGON AND XENON
[J].
BLANK, P
论文数:
0
引用数:
0
h-index:
0
机构:
GESELLS STRAHLEN & UMWELTFORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER
GESELLS STRAHLEN & UMWELTFORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER
BLANK, P
;
WITTMAACK, K
论文数:
0
引用数:
0
h-index:
0
机构:
GESELLS STRAHLEN & UMWELTFORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER
GESELLS STRAHLEN & UMWELTFORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,FED REP GER
WITTMAACK, K
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(03)
:1519
-1528
←
1
2
3
4
5
→