OXYGEN-CONCENTRATION DEPENDENCE OF SECONDARY ION YIELD ENHANCEMENT

被引：135

作者：

WITTMAACK, K

机构：

来源：

SURFACE SCIENCE | 1981年 / 112卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(81)90340-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：168 / 180

页数：13

共 43 条

[21]

Morgan A. E., 1980, Surface and Interface Analysis, V2, P123, DOI 10.1002/sia.740020402

[22] EFFECT OF OXYGEN IMPLANTATION UPON SECONDARY ION YIELDS [J].

MORGAN, AE ;

DEGREFTE, HAM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :164-168

[23] SPUTTERING OF TA2O5 BY AR+ IONS AT ENERGIES BELOW 1-KEV [J].

OECHSNER, H ;

SCHOOF, H ;

STUMPE, E .

SURFACE SCIENCE, 1978, 76 (02) :343-354

[24] MASS-SPECTROSCOPY OF SPUTTERED NEUTRALS AND ITS APPLICATION FOR SURFACE ANALYSIS [J].

OECHSNER, H ;

GERHARD, W .

SURFACE SCIENCE, 1974, 44 (02) :480-488

[25]

PRIGGE S, 1980, ADV MASS SPECTROM, V8, P543

[26] AN AES-SIMS STUDY OF SILICON OXIDATION INDUCED BY ION OR ELECTRON-BOMBARDMENT [J].

REUTER, W ;

WITTMAACK, K .

APPLICATIONS OF SURFACE SCIENCE, 1980, 5 (03) :221-242

[27] MODEL CALCULATION OF ION COLLECTION IN PRESENCE OF SPUTTERING .1. ZERO ORDER APPROXIMATION [J].

SCHULZ, F ;

WITTMAACK, K .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01) :31-40

[28]

SLODZIAN G, 1966, CR ACAD SCI B PHYS, V263, P1246

[29]

Thomas G. E., 1977, Radiation Effects, V31, P185, DOI 10.1080/00337577708233276

[30]

WACH W, 1981, J APPL PHYS, V52

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