MODEL CALCULATION OF ION COLLECTION IN PRESENCE OF SPUTTERING .1. ZERO ORDER APPROXIMATION

[1] COLLECTION AND SPUTTERING EXPERIMENTS WITH NOBLE GAS IONS [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02): : 257 - 278

[2] SPUTTERING EXPERIMENTS IN THE HIGH ENERGY REGION [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02): : 279 - 289

[3] DOSE DEPENDENCE OF 45 keV V + AND Bi + ION SPUTTERING YIELD OF COPPER. [J]. Radiation Effects, 1973, 19 (04): : 257 - 261

[4] HEAVY-ION SPUTTERING YIELD OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 1919 - 1921

[5] ANOMALOUSLY HIGH COLLECTION OF COPPER IONS IMPLANTED IN ALUMINIUM [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 4 (03): : 663 - &

[6] ARMINEN E, 1971, ANN ACAD SCI FENNI A, V6

[7] Biersack J. P., 1973, Radiation Effects, V19, P249, DOI 10.1080/00337577308232256

[8] RANGE PARAMETER DISTORTION IN HEAVY-ION IMPLANTATION [J]. PHYSICS LETTERS A, 1975, 54 (01) : 33 - 34

[9] BLANK P, 1975, VERHANDL DPG, V10, P575

[10] BLANK P, IN PRESS

[1] COLLECTION AND SPUTTERING EXPERIMENTS WITH NOBLE GAS IONS [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02): : 257 - 278

[2] SPUTTERING EXPERIMENTS IN THE HIGH ENERGY REGION [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02): : 279 - 289

[3] DOSE DEPENDENCE OF 45 keV V + AND Bi + ION SPUTTERING YIELD OF COPPER. [J]. Radiation Effects, 1973, 19 (04): : 257 - 261

[4] HEAVY-ION SPUTTERING YIELD OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 1919 - 1921

[5] ANOMALOUSLY HIGH COLLECTION OF COPPER IONS IMPLANTED IN ALUMINIUM [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 4 (03): : 663 - &

[6] ARMINEN E, 1971, ANN ACAD SCI FENNI A, V6

[7] Biersack J. P., 1973, Radiation Effects, V19, P249, DOI 10.1080/00337577308232256

[8] RANGE PARAMETER DISTORTION IN HEAVY-ION IMPLANTATION [J]. PHYSICS LETTERS A, 1975, 54 (01) : 33 - 34

[9] BLANK P, 1975, VERHANDL DPG, V10, P575

[10] BLANK P, IN PRESS