共 33 条
- [1] LUMINESCENCE IN ZN-DOPED GAAS[J]. PHYSICAL REVIEW, 1969, 178 (03): : 1399 - &ARNOLD, GWBRICE, DK
- [2] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC[J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6154 - 6164BARAFF, GASCHLUTER, M
- [3] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343BARAFF, GASCHLUTER, M
- [4] THEORY OF INFRARED AND RAMAN PROCESSES IN CRYSTALS - SELECTION RULES IN DIAMOND AND ZINCBLENDE[J]. PHYSICAL REVIEW, 1963, 131 (04): : 1489 - +BIRMAN, JL
- [5] SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS[J]. PHYSICAL REVIEW B, 1977, 16 (02): : 790 - 796CHADI, DJ
- [6] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5335 - 5359CHANTRE, AVINCENT, GDUBOIS
- [7] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582CHELIKOWSKY, JRCOHEN, ML
- [8] FISCHER D, COMMUNICATION
- [9] FRANK W, 1985, UNPUB INT S GAAS REL
- [10] A THEORY OF EDGE-EMISSION PHENOMENA IN CDS, ZNS AND ZNO[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 110 - 119HOPFIELD, JJ