INFRARED-ABSORPTION PROPERTIES OF EL2 IN GAAS

[21] PHONON INTERACTION IN OPTICAL-TRANSITIONS VIA DEEP O DONOR IN GAP [J]. JOURNAL OF LUMINESCENCE, 1976, 12 (01) : 507 - 514

[22] PROPERTIES OF THE EL2 LEVEL IN GAAS1-XPX [J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5603 - 5609

[23] VARIATION OF THE MIDGAP ELECTRON TRAPS (EL2) IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6448 - 6451

[24] SPECTRAL DISTRIBUTIONS OF PHOTOQUENCHING RATE AND MULTIMETASTABLE STATES FOR MIDGAP ELECTRON TRAPS (EL2 FAMILY) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 69 - 71

[25] Taniguchi M., 1984, Semi-Insulating III-V materials, P231

[26] ZERO-PHONON LINE ASSOCIATED WITH THE MIDGAP LEVEL EL2 IN GAAS - CORRELATION WITH THE ASGA ANTISITE DEFECT [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8859 - 8862

[27] PHOTOELECTRIC MEMORY EFFECT IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3643 - 3649

[28] IDENTIFICATION OF A DEFECT IN A SEMICONDUCTOR - EL2 IN GAAS [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7192 - 7202

[29] IDENTIFICATION OF EL2 IN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 970 - 972

[30] ATOMIC MODEL FOR THE EL2 DEFECT IN GAAS [J]. PHYSICAL REVIEW B, 1987, 35 (05) : 2330 - 2339

[21] PHONON INTERACTION IN OPTICAL-TRANSITIONS VIA DEEP O DONOR IN GAP [J]. JOURNAL OF LUMINESCENCE, 1976, 12 (01) : 507 - 514

[22] PROPERTIES OF THE EL2 LEVEL IN GAAS1-XPX [J]. PHYSICAL REVIEW B, 1986, 34 (08): : 5603 - 5609

[23] VARIATION OF THE MIDGAP ELECTRON TRAPS (EL2) IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6448 - 6451

[24] SPECTRAL DISTRIBUTIONS OF PHOTOQUENCHING RATE AND MULTIMETASTABLE STATES FOR MIDGAP ELECTRON TRAPS (EL2 FAMILY) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 69 - 71

[25] Taniguchi M., 1984, Semi-Insulating III-V materials, P231

[26] ZERO-PHONON LINE ASSOCIATED WITH THE MIDGAP LEVEL EL2 IN GAAS - CORRELATION WITH THE ASGA ANTISITE DEFECT [J]. PHYSICAL REVIEW B, 1986, 33 (12): : 8859 - 8862

[27] PHOTOELECTRIC MEMORY EFFECT IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3643 - 3649

[28] IDENTIFICATION OF A DEFECT IN A SEMICONDUCTOR - EL2 IN GAAS [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 7192 - 7202

[29] IDENTIFICATION OF EL2 IN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 970 - 972

[30] ATOMIC MODEL FOR THE EL2 DEFECT IN GAAS [J]. PHYSICAL REVIEW B, 1987, 35 (05) : 2330 - 2339