共 42 条
- [22] VIBRATIONAL STUDY OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) AND SI(100) SURFACES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (03): : 113 - 124
- [23] Ibach H., 1982, ELECTRON ENERGY LOSS
- [24] KREY D, 1982, SENSOR ACTUATOR, V3, P169
- [25] CHEMICAL ETCHING OF P-TYPE SI(100) BY K2CR2O7 - A COMBINED INVESTIGATION BY TRMC AND XPS, UPS, AND LEED [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 42 (01): : 57 - 64
- [26] HYDROGEN SENSITIVE MOS-STRUCTURES .1. PRINCIPLES AND APPLICATIONS [J]. SENSORS AND ACTUATORS, 1981, 1 (04): : 403 - 426
- [27] HYDROGEN-SENSITIVE PD-GATE MOS-TRANSISTOR [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3876 - 3881
- [28] MURARKA SP, 1983, SILICIDES VLSI APPLI
- [29] ORTEGA A, 1980, P ICSS4 ECOSS 3 CANN
- [30] INELASTIC-SCATTERING OF SLOW-ELECTRONS FROM SI(111) SURFACES [J]. PHYSICAL REVIEW B, 1984, 30 (10) : 5968 - 5986