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ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF III/V COMPOUND SEMICONDUCTORS WITH NOVEL ORGANOMETALLIC PRECURSORS
被引:84
作者
:
COWLEY, AH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
COWLEY, AH
[
1
]
BENAC, BL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
BENAC, BL
[
1
]
EKERDT, JG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
EKERDT, JG
[
1
]
JONES, RA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
JONES, RA
[
1
]
KIDD, KB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
KIDD, KB
[
1
]
LEE, JY
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
LEE, JY
[
1
]
MILLER, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
MILLER, JE
[
1
]
机构
:
[1]
UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712
来源
:
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
|
1988年
/ 110卷
/ 18期
关键词
:
Compound Semiconductor Synthesis - Organometallic Chemical Vapor Deposition - Organometallic Precursor Compounds;
D O I
:
10.1021/ja00226a051
中图分类号
:
O6 [化学];
学科分类号
:
0703 ;
摘要
:
引用
收藏
页码:6248 / 6249
页数:2
相关论文
共 45 条
[41]
VARIOUS CHEMICAL MECHANISMS FOR THE CRYSTAL-GROWTH OF III-V SEMICONDUCTORS USING COORDINATION-COMPOUNDS AS STARTING MATERIAL IN THE MOCVD PROCESS
ZAOUK, A
论文数:
0
引用数:
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h-index:
0
ZAOUK, A
SALVETAT, E
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0
引用数:
0
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SALVETAT, E
SAKAYA, J
论文数:
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0
SAKAYA, J
MAURY, F
论文数:
0
引用数:
0
h-index:
0
MAURY, F
CONSTANT, G
论文数:
0
引用数:
0
h-index:
0
CONSTANT, G
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 135
-
144
[42]
1986, CHEM ENG NEWS 0707, P34
[43]
1985, CHEM ENG PROG MAY, P30
[44]
1986, HIGH TECHNOLOGY JUL, P26
[45]
1986, J CRYST GROWTH, V551, P1
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共 45 条
[41]
VARIOUS CHEMICAL MECHANISMS FOR THE CRYSTAL-GROWTH OF III-V SEMICONDUCTORS USING COORDINATION-COMPOUNDS AS STARTING MATERIAL IN THE MOCVD PROCESS
ZAOUK, A
论文数:
0
引用数:
0
h-index:
0
ZAOUK, A
SALVETAT, E
论文数:
0
引用数:
0
h-index:
0
SALVETAT, E
SAKAYA, J
论文数:
0
引用数:
0
h-index:
0
SAKAYA, J
MAURY, F
论文数:
0
引用数:
0
h-index:
0
MAURY, F
CONSTANT, G
论文数:
0
引用数:
0
h-index:
0
CONSTANT, G
[J].
JOURNAL OF CRYSTAL GROWTH,
1981,
55
(01)
: 135
-
144
[42]
1986, CHEM ENG NEWS 0707, P34
[43]
1985, CHEM ENG PROG MAY, P30
[44]
1986, HIGH TECHNOLOGY JUL, P26
[45]
1986, J CRYST GROWTH, V551, P1
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1
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