X-RAY-LITHOGRAPHY, WHERE IT IS NOW, AND WHERE IT IS GOING

被引：23

作者：

MALDONADO, JR

机构：

[1] IBM General Technology Division (GTD), Hopewell Junction, 12533, N.Y.

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 07期

关键词：

X-ray lithography review; x-ray lithography systems;

D O I：

10.1007/BF02655238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the x-ray lithography (XRL) systems presently developed, including the present state of source, resist, mask technology, and exposure tools. Future directions in mask substrate materials, and alternative x-ray sources will be presented. © 1990 The Mineral, Metal & Materials Society, Inc.

引用

页码：699 / 709

页数：11

共 73 条

[1]

ACOSTA R, 1984, P SPIE, V484

[2]

Acosta R. E., 1985, Microelectronic Engineering, V3, P615, DOI 10.1016/0167-9317(85)90076-0

[3]

BETZ H, 1985, TECHN P SEMICON EURO

[4]

BIJKERK F, 1988, IN PRESS P MICROCIRC

[5] ALIGNMENT ERRORS FROM RESIST COATING TOPOGRAPHY [J].

BOBROFF, N ;

ROSENBLUTH, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :403-408

[6]

BYER R, 1988, SCIENCE, V239, P12

[7]

COQUIN G, 1975, Patent No. 3892973

[8] MICROMECHANICS: A SILICON MICROFABRICATION TECHNOLOGY. [J].

Csepregi, L. .

Microelectronic Engineering, 1985, 3 (1-4) :221-234

[9]

CULLMAN E, 1988, J VAC SCI TECHNOL B, V6

[10]

CUTHBERT JD, 1979, P MICROCIRCUIT ENG C, P190

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