HIGH-SENSITIVITY PHOTORESISTORS BASED ON HOMOGENEOUS PB1-X-YSNXGEYTEIN EPITAXIAL-FILMS

被引：15

作者：

CHISHKO, VF

HRYAPOV, VT

KASATKIN, IL

OSIPOV, VV

SLINKO, EI

SMOLIN, OV

TRETINIK, VV

机构：

[1] Research Development and Production Center ORION, 111123 Moscow

来源：

INFRARED PHYSICS | 1992年 / 33卷 / 03期

关键词：

D O I：

10.1016/0020-0891(92)90013-J

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Highly photosensitive Pb1-xSnxTe doped with In epitaxial films has been grown by a hot wall method on BaF2 substrates. The temperature dependence of electron concentration and mobility from 6 to 77 K was studied. The performance of photoresistors was measured and specific detectivities D* congruent-to 1.7 x 10(13) cm Hz1/2 W-1 at T = 20 K and D* congruent-to 10(12) cm Hz1/2 W-1 at T = 40 K were achieved.

引用

页码：197 / 201

页数：5

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