TISI2 THICKNESS LIMITATIONS FOR USE WITH SHALLOW JUNCTIONS AND SWAMI OR LOCOS ISOLATION

被引：20

作者：

CHEN, DC

CASS, TR

TURNER, JE

MERCHANT, PP

CHIU, KY

机构：

[1] HEWLETT PACKARD LABS,SILICON PROC LAB,PALO ALTO,CA 94304

[2] HEWLETT PACKARD LABS,INTEGRATED CIRCUIT LAB,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 10期

关键词：

D O I：

10.1109/T-ED.1986.22695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1463 / 1469

页数：7

共 12 条

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J].

ALPERIN, ME ;

HOLLAWAY, TC ;

HAKEN, RA ;

GOSMEYER, CD ;

KARNAUGH, RV ;

PARMANTIE, WD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) :61-69

[2]

[Anonymous], PHYS SEMICONDUCTOR D

[3] THERMAL-STABILITY OF AL-SI/TISI2/SI SCHOTTKY DIODES [J].

CHEN, DC ;

MERCHANT, P ;

AMANO, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :709-713

[4] THE SLOPED-WALL SWAMI - A DEFECT-FREE ZERO BIRDS-BEAK LOCAL OXIDATION PROCESS FOR SCALED VLSI TECHNOLOGY [J].

CHIU, KY ;

MOLL, JL ;

CHAM, KM ;

LIN, J ;

LAGE, C ;

ANGELOS, S ;

TILLMAN, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1506-1511

[5] DOPANT REDISTRIBUTION IN SILICIDES - MATERIALS AND PROCESS ISSUES [J].

COOPER, CB ;

POWELL, RA ;

CHOW, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :718-722

[6]

Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[7]

MURARKA SP, 1983, SILICIDES VLSI APPLI, P130

[8]

PARILLO LC, 1984, IEDM, P418

[9]

PARK HK, 1984, J VAC SCI TECHNOL A, V2, P264, DOI 10.1116/1.572576

[10] LATERAL GROWTH OF TITANIUM SILICIDE OVER A SILICON DIOXIDE LAYER [J].

REVESZ, P ;

GYIMESI, J ;

POGANY, L ;

PETO, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2114-2115

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