MONTE-CARLO ALGORITHMS FOR COLLISIONAL BROADENING AND INTRACOLLISIONAL FIELD-EFFECT IN SEMICONDUCTOR HIGH-FIELD TRANSPORT

被引：34

作者：

REGGIANI, L

LUGLI, P

JAUHO, AP

机构：

[1] UNIV MODENA, CTR INTERUNIV STRUTTURA MAT, I-41100 MODENA, ITALY

[2] UNIV COPENHAGEN, HERLEV HOSP, PHYS LAB, DK-2730 HERLEV, DENMARK

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 06期

关键词：

D O I：

10.1063/1.341545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3072 / 3078

页数：7

共 34 条

[1] MONTE-CARLO CALCULATIONS OF ELECTRON-TRANSPORT IN GAAS/ALGAAS SUPERLATTICES
ARTAKI, M
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[J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (06) : 489 - 493
[2] QUANTUM TRANSPORT-THEORY OF HIGH-FIELD CONDUCTION IN SEMICONDUCTORS
BARKER, JR
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[3] HIGH-FIELD COLLISION RATES IN POLAR SEMICONDUCTORS
BARKER, JR
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[4] HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS
BRENNAN, K
HESS, K
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (04) : 347 - 357
[5] THEORY OF HIGH-FIELD TRANSPORT OF HOLES IN GAAS AND INP
BRENNAN, K
HESS, K
[J]. PHYSICAL REVIEW B, 1984, 29 (10): : 5581 - 5590
[6] DIRECT MEASUREMENT OF THE ENERGY-DISTRIBUTION OF HOT-ELECTRONS IN SILICON DIOXIDE
BRORSON, SD
DIMARIA, DJ
FISCHETTI, MV
PESAVENTO, FL
SOLOMON, PM
DONG, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1302 - 1313
[7] THE EFFECT OF COLLISIONAL BROADENING ON MONTE-CARLO SIMULATIONS OF HIGH-FIELD TRANSPORT IN SEMICONDUCTOR-DEVICES
CAPASSO, F
PEARSALL, TP
THORNBER, KK
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (11): : 295 - 297
[8] MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN GAAS INCLUDING QUANTUM EFFECTS
CHANG, YC
TING, DZY
TANG, JY
HESS, K
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 76 - 78
[9] GRADSHTEYN IS, 1986, TABLE INTEGRALS SERI, P930
[10] THE INTRA-COLLISIONAL FIELD-EFFECT IN SEMICONDUCTORS .1. ANALYTIC RESULTS
HERBERT, DC
TILL, SJ
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (26): : 5411 - 5423

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