TEMPERATURE-DEPENDENT POLARIZATION BEHAVIOR OF SEMICONDUCTOR-LASERS

[11] BEHAVIOR OF THRESHOLD CURRENT AND POLARIZATION OF STIMULATED EMISSION OF GAAS INJECTION LASERS UNDER UNIAXIAL STRESS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 338 - 341

[12] INTERFACE STRESS OF ALXGA1-XAS-GAAS LAYER STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3171 - 3175

[13] EFFECT OF UNIAXIAL PRESSURE ON THRESHOLD CURRENT OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (04) : 124 - &

[14] ROZGONYI GA, 1974, J CRYST GROWTH, V27, P106

[15] EFFECT OF A GAASXP1-X TRANSITION ZONE ON PERFECTION OF GAP CRYSTALS GROWN BY DEPOSITION ONTO GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3273 - &

[11] BEHAVIOR OF THRESHOLD CURRENT AND POLARIZATION OF STIMULATED EMISSION OF GAAS INJECTION LASERS UNDER UNIAXIAL STRESS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 338 - 341

[12] INTERFACE STRESS OF ALXGA1-XAS-GAAS LAYER STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3171 - 3175

[13] EFFECT OF UNIAXIAL PRESSURE ON THRESHOLD CURRENT OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (04) : 124 - &

[14] ROZGONYI GA, 1974, J CRYST GROWTH, V27, P106

[15] EFFECT OF A GAASXP1-X TRANSITION ZONE ON PERFECTION OF GAP CRYSTALS GROWN BY DEPOSITION ONTO GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3273 - &