AN APPARATUS FOR STUDYING SPUTTER DEPOSITION WITH X-RAYS

被引:19
作者
PAYNE, AP [1 ]
CLEMENS, BM [1 ]
BRENNAN, S [1 ]
机构
[1] STANFORD SYNCHROTRON RADIAT LAB,STANFORD,CA 94309
关键词
D O I
10.1063/1.1143117
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
While electron-based structural probes have been extensively applied to low-pressure film growth techniques such as evaporation, similar studies on sputter deposition have been hindered by the relatively high gas pressure (1-10 mT) inherent to the technique. Because x rays scatter more weakly than electrons the absorption in the ambient is not significant and diffraction from the growing film can be observed if a sufficiently bright source of x rays is used. We have developed a chamber which combines features of an ultrahigh-vacuum sputter-deposition system with the goniometric adjustments and the x-ray windows of a scattering chamber. A description of its design and recent results are presented.
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页码:1147 / 1149
页数:3
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