SIMOX - BURIED LAYER FORMATION BY ION-IMPLANTATION - EQUIPMENT AND TECHNIQUES

被引：14

作者：

WITTKOWER, AB

GUERRA, MA

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90235-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：512 / 517

页数：6

共 9 条

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[2] LAYER THICKNESSES IN OXYGEN IMPLANTATION OF SILICON [J].

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :158-162

[3] END STATION DESIGN AND WAFER QUALITY-CONTROL FOR A HIGH-CURRENT OXYGEN IMPLANTER [J].

DOUGLASHAMILTON, DH ;

RUFFELL, JP ;

KAIM, RE ;

IZUMI, K .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :324-327

[4]

DOUGLASHAMILTON DH, 1986, JUN P E MRS STRASB, P395

[5]

GOLANSKI A, 1986, JUN P E MRS STRASB

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IZUMI, K ;

OMURA, Y ;

SAKAI, T .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (05) :845-861

[7]

MARGAIL J, 1988, EUROPEAN SILICON INS, pD4

[8]

Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042

[9] A HIGH-CURRENT, HIGH-VOLTAGE OXYGEN ION IMPLANTER [J].

RUFFELL, JP ;

DOUGLASHAMILTON, DH ;

KAIM, RE ;

IZUMI, K .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :229-234

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