ELECTRONIC LEVELS IN SURFACE SPACE-CHARGE LAYERS ON SI(100)

[11] KAMGAR A, 1974, 12TH P INT C PHYS SE, P709

[12] Ohkawa F. J., 1975, Progress of Theoretical Physics Supplement, P164, DOI 10.1143/PTPS.57.164

[13] OHKAWA FJ, TO BE PUBLISHED

[14] OHKAWA FJ, COMMUNICATION

[15] SCHRIEFFER JR, 1957, SEMICONDUCTOR SURFAC

[16] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &

[17] CALCULATED ENERGY-LEVELS AND OPTICAL-ABSORPTION IN N-TYPE SI ACCUMULATION LAYERS AT LOW-TEMPERATURE [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (16) : 960 - 963

[18] STERN P, 1974, SOLID STATE SCI, V4, P499

[19] EFFECT OF ELECTRON-ELECTRON INTERACTION ON EXCITATION-ENERGIES OF AN N-INVERSION LAYER ON SI [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (09) : 598 - 601

[20] CONTINUOUSLY VOLTAGE-TUNABLE LINE ABSORPTION IN SURFACE QUANTIZATION [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (14) : 925 - &

[11] KAMGAR A, 1974, 12TH P INT C PHYS SE, P709

[12] Ohkawa F. J., 1975, Progress of Theoretical Physics Supplement, P164, DOI 10.1143/PTPS.57.164

[13] OHKAWA FJ, TO BE PUBLISHED

[14] OHKAWA FJ, COMMUNICATION

[15] SCHRIEFFER JR, 1957, SEMICONDUCTOR SURFAC

[16] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &

[17] CALCULATED ENERGY-LEVELS AND OPTICAL-ABSORPTION IN N-TYPE SI ACCUMULATION LAYERS AT LOW-TEMPERATURE [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (16) : 960 - 963

[18] STERN P, 1974, SOLID STATE SCI, V4, P499

[19] EFFECT OF ELECTRON-ELECTRON INTERACTION ON EXCITATION-ENERGIES OF AN N-INVERSION LAYER ON SI [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (09) : 598 - 601

[20] CONTINUOUSLY VOLTAGE-TUNABLE LINE ABSORPTION IN SURFACE QUANTIZATION [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (14) : 925 - &