RADIATION EFFECTS IN TASIX POLYSILICON MOS GATE STRUCTURES

[1] Anderson Roy, COMMUNICATION

[2] CHIN MR, 1983, APPL PHYS LETT, V42, P884

[3] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[4] STRESS IN SPUTTERED TASIX FILMS ON POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 863 - 865

[5] DRAPER BW, UNPUB

[6] VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1534 - 1539

[7] ELKAREH B, 1978, J VAC SCI TECHNOL, V15, P1047, DOI 10.1116/1.569733

[8] HALBLEIB JA, 1974, SLA731026 SAND NAT L

[9] MCBRAYER JD, 1983, THESIS STANFORD U

[10] SOURCE OF RADIATION-DAMAGE TO MOS DEVICES DURING S-GUN METALLIZATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 400 - 402

[1] Anderson Roy, COMMUNICATION

[2] CHIN MR, 1983, APPL PHYS LETT, V42, P884

[3] PROCESS OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) : 2151 - 2156

[4] STRESS IN SPUTTERED TASIX FILMS ON POLYCRYSTALLINE SILICON [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 863 - 865

[5] DRAPER BW, UNPUB

[6] VISCOUS SHEAR-FLOW MODEL FOR MOS DEVICE RADIATION SENSITIVITY [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (06) : 1534 - 1539

[7] ELKAREH B, 1978, J VAC SCI TECHNOL, V15, P1047, DOI 10.1116/1.569733

[8] HALBLEIB JA, 1974, SLA731026 SAND NAT L

[9] MCBRAYER JD, 1983, THESIS STANFORD U

[10] SOURCE OF RADIATION-DAMAGE TO MOS DEVICES DURING S-GUN METALLIZATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 400 - 402