ELECTRICAL-CONDUCTIVITY OF ZN3AS2

被引：15

作者：

SZATKOWSKI, J

SIERANSKI, K

机构：

[1] Institute of Physics, Technical University of Wrocław, 50-370 Wrocław

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1990年 / 51卷 / 03期

关键词：

electrical transport; impurity conduction; Zinc arsenide;

D O I：

10.1016/0022-3697(90)90053-I

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electrical transport measurements were made on p-type Zn3As2 in the 4.2-300 K temperature range. In the low temperature region two activation energies were observed in the variation of the conductivity vs reciprocal temperature. This feature was explained taking into account the existence of an impurity band. This impurity band originated from acceptors with an ionization energy of about 20 meV. At high temperatures the conductivity seems to be limited by acoustic-phonon scattering. © 1990.

引用

页码：249 / 251

页数：3

共 15 条

[1]

BECLA P, 1975, ACTA PHYS POL A, V47, P121

[2] INFLUENCE OF PRESSURE ON ELECTRICAL PROPERTIES OF CD3-XZNXAS2 SOLID-SOLUTIONS [J].