MAGNETORESISTANCE EFFECT IN P-ZN3AS2 SINGLE-CRYSTALS

被引:11
作者
IWAMI, M [1 ]
FUJISHIMA, K [1 ]
KAWABE, K [1 ]
机构
[1] OSAKA UNIV,DEPT ELECT ENGN,DENKI BUSSEI LAB,SUITA,OSAKA 565,JAPAN
关键词
D O I
10.1143/JPSJ.41.521
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:521 / 525
页数:5
相关论文
共 11 条
[2]   NEGATIVE MAGNETORESISTANCE IN P-ZN3AS2 [J].
IWAMI, M ;
FUJISHIMA, K ;
KAWABE, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1973, 35 (04) :1261-1261
[3]   RESISTANCE ANOMALY AND NEGATIVE MAGNETORESISTANCE IN N-TYPE INSB AT VERY LOW TEMPERATURES [J].
KATAYAMA, Y ;
TANAKA, S .
PHYSICAL REVIEW, 1967, 153 (03) :873-+
[4]   ELECTRICAL PROPERTIES OF UNDOPED P-CDSB AT LOW TEMPERATURES [J].
MATSUNAMI, H ;
NISHIHARA, Y ;
TANAKA, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (06) :1507-+
[5]   FAR-INFRARED ABSORPTION IN N-TYPE SILICON DUE TO PHOTON-INDUCED HOPPING [J].
MILWARD, RC ;
NEURINGE.LJ .
PHYSICAL REVIEW LETTERS, 1965, 15 (16) :664-&
[6]   SPIN-DEPENDENT CONDUCTIVITY OF PHOSPHORUS-DOPED SILICON IN INTERMEDIATE CONCENTRATION REGION [J].
MORIGAKI, K ;
ONDA, M .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 36 (04) :1049-1057
[7]   ELECTRON-SPIN RESONANCE STUDIES OF INTERACTING DONOR CLUSTERS IN PHOSPHORUS-DOPED SILICON [J].
MORIGAKI, K ;
MAEKAWA, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (02) :462-+