FAR-INFRARED ABSORPTION IN N-TYPE SILICON DUE TO PHOTON-INDUCED HOPPING

[1] THEORY OF ABSORPTION OF ELECTROMAGNETIC RADIATION BY HOPPING IN N-TYPE SILICON + GERMANIUM [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (1A): : A266 - &

[2] BLINOWSKI J, TO BE PUBLISHED

[3] GEBBIE HA, 1961, ADV QUANTUM ELECTRON, P155

[4] POLARIZATION CONDUCTIVITY IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1963, 132 (01): : 178 - &

[5] HASWELL R, 1964, APPL OPTICS, V3, P1195, DOI 10.1364/AO.3.001195

[6] IMPURITY CONDUCTION AT LOW CONCENTRATIONS [J]. PHYSICAL REVIEW, 1960, 120 (03): : 745 - 755

[7] APPROXIMATIONS FOR AC IMPURITY HOPPING CONDUCTION [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A564 - &

[8] LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J]. PHYSICAL REVIEW, 1961, 122 (06): : 1742 - &

[9] SINGER JR, 1961, ADVANCES QUANTUM ED, P155

[10] MICROWAVE ABSORPTION IN SILICON AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1964, 134 (1A): : A256 - +

[1] THEORY OF ABSORPTION OF ELECTROMAGNETIC RADIATION BY HOPPING IN N-TYPE SILICON + GERMANIUM [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (1A): : A266 - &

[2] BLINOWSKI J, TO BE PUBLISHED

[3] GEBBIE HA, 1961, ADV QUANTUM ELECTRON, P155

[4] POLARIZATION CONDUCTIVITY IN P-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1963, 132 (01): : 178 - &

[5] HASWELL R, 1964, APPL OPTICS, V3, P1195, DOI 10.1364/AO.3.001195

[6] IMPURITY CONDUCTION AT LOW CONCENTRATIONS [J]. PHYSICAL REVIEW, 1960, 120 (03): : 745 - 755

[7] APPROXIMATIONS FOR AC IMPURITY HOPPING CONDUCTION [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A564 - &

[8] LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J]. PHYSICAL REVIEW, 1961, 122 (06): : 1742 - &

[9] SINGER JR, 1961, ADVANCES QUANTUM ED, P155

[10] MICROWAVE ABSORPTION IN SILICON AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1964, 134 (1A): : A256 - +