NEW DEVELOPMENTS IN THE FIELD OF SUPERHARD COATINGS

被引:80
作者
EHRHARDT, H
机构
[1] Technische Physik der Universität Kaiserslautern, D-67663 Kaiserslautern
关键词
SUPERHARDNESS; CVD DIAMOND; CUBIC BORON NITRIDE COATINGS; AMORPHOUS MATERIALS; B; C; N; SI MATERIALS;
D O I
10.1016/0257-8972(95)08212-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
As a result of covalent bonding, the four elements boron, carbon, nitrogen and silicon can form superhard materials (Vickers hardness of more than 4000), such as diamond, highly tetrahedral amorphous carbon (ta-C and ta-C: H), crystalline and amorphous silicon carbide, cubic boron nitride and, possibly, the hypothetical carbon nitride beta-C3N4. Lately, fast progress has been achieved in chemical vapour deposition of diamond for coating of tools, as well as in the low temperature preparation of ta-C, ta-C:H, a-SiC:H and c-BN. This second group of superhard materials is produced by subplantation of energetic particles (of the order of 100 eV) into the initially amorphous deposits. This leads to high stress values and high thermal spike temperatures close to the surface. Depending on the mobilities of the atoms in the network and on the quenching temperature (about 10(14) K s(-1)), the material may form nanocrystallites (c-BN) or remain amorphous (ta-C), with clustering of sp(3) and sp(2) bondings. However, coatings with more than 93% c-BN have been produced by sputtering of h-BN and argon ion plating at room temperature, without using an ion beam arrangement. Various attempts to prepare and identify beta-C3N4 are reported. For this material, a higher hardness is predicted than that for diamond.
引用
收藏
页码:29 / 35
页数:7
相关论文
共 19 条
[1]   GROWTH AND CHARACTERIZATION OF C-N THIN-FILMS [J].
CHEN, MY ;
LIN, X ;
DRAVID, VP ;
CHUNG, YW ;
WONG, MS ;
SPROUL, WD .
SURFACE & COATINGS TECHNOLOGY, 1992, 55 (1-3) :360-364
[2]   GROWTH OF CUBIC BORON-NITRIDE COATINGS IN A MAGNETIC-FIELD ENHANCED RF GLOW-DISCHARGE [J].
DWORSCHAK, W ;
JUNG, K ;
EHRHARDT, H .
DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) :337-340
[3]  
EHRHARDT H, 1994, P CIMTEC FLORENCE
[4]   DEPOSITION AND CHARACTERIZATION OF BORON-NITRIDE THIN-FILMS [J].
KESTER, DJ ;
AILEY, KS ;
DAVIS, RF .
DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) :332-336
[5]   INFLUENCES OF WC-CO HARD METAL-SUBSTRATE PRETREATMENTS WITH BORON AND SILICON ON LOW-PRESSURE DIAMOND DEPOSITION [J].
KUBELKA, S ;
HAUBNER, R ;
LUX, B ;
STEINER, R ;
STINGEDER, G ;
GRASSERBAUER, M .
DIAMOND AND RELATED MATERIALS, 1994, 3 (11-12) :1360-1369
[6]   SUBSTANTIATION OF SUBPLANTATION MODEL FOR DIAMOND-LIKE FILM GROWTH BY ATOMIC-FORCE MICROSCOPY [J].
LIFSHITZ, Y ;
LEMPERT, GD ;
GROSSMAN, E .
PHYSICAL REVIEW LETTERS, 1994, 72 (17) :2753-2756
[7]   STRUCTURAL-PROPERTIES AND ELECTRONIC-STRUCTURE OF LOW-COMPRESSIBILITY MATERIALS - BETA-SI3N4 AND HYPOTHETICAL BETA-C3N4 [J].
LIU, AY ;
COHEN, ML .
PHYSICAL REVIEW B, 1990, 41 (15) :10727-10734
[8]   SYNTHESIS, STRUCTURE AND APPLICATIONS OF AMORPHOUS DIAMOND [J].
MCKENZIE, DR ;
MULLER, DA ;
KRAVTCHINSKAIA, E ;
SEGAL, D ;
COCKAYNE, DJH ;
AMARATUNGA, G ;
SILVA, R .
THIN SOLID FILMS, 1991, 206 (1-2) :198-203
[9]   COMPRESSIVE STRESS-INDUCED FORMATION OF CUBIC BORON-NITRIDE [J].
MCKENZIE, DR ;
MCFALL, WD ;
SAINTY, WG ;
DAVIS, CA ;
COLLINS, RE .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :970-976
[10]   INVESTIGATION OF THE CVD DIAMOND INTERMEDIATE LAYER STEEL INTERFACE [J].
NESLADEK, M ;
ASINARI, C ;
SPINNEWYN, J ;
LEBOUT, R ;
LORENT, R ;
DOLIESLAEGER, M .
DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) :912-916