ON THE AGING OF ZNS-MN ELECTROLUMINESCENT THIN-FILMS GROWN BY THE ATOMIC LAYER EPITAXY TECHNIQUE

被引：23

作者：

TORNQVIST, R ^{[1
]}

KORPELA, S ^{[1
]}

机构：

[1] HELSINKI UNIV TECHNOL,PHYS LAB,SF-02150 ESPOO 15,FINLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 59卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(82)90357-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：395 / 398

页数：4

共 10 条

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[2]

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JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3590-3599

[4] OPTICAL SWITCHING IN THIN-FILM ELECTROLUMINESCENT DEVICES WITH INHERENT MEMORY CHARACTERISTICS [J].

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ALT, PM .

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[5]

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[6] MODELING AC THIN-FILM ELECTROLUMINESCENT DEVICES [J].

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[7]

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[8] SATURATION OF THE MN-2+ EMISSION IN AC ZNS-MN ELECTROLUMINESCENT THIN-FILM DEVICES [J].

TORNQVIST, R .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :399-402

[9]

YANG KW, 1981, 159 EL SOC M MINN MI, P422

[10] MECHANISM OF INHERENT MEMORY IN THIN FILM-EL DEVICE [J].

YOSHIDA, M ;

KAKIHARA, Y ;

YAMASHITA, T ;

TANIGUCHI, K ;

INOGUCHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :127-133

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