学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
ELECTROMIGRATION STUDIES USING INSITU TEM ELECTRICAL-RESISTANCE MEASUREMENTS
被引:6
作者
:
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
CHANG, CY
VANKAR, VD
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
VANKAR, VD
LEE, YC
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
LEE, YC
VOOK, RW
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
VOOK, RW
PATRINOS, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
PATRINOS, AJ
SCHWARZ, JA
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
SCHWARZ, JA
机构
:
[1]
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
[2]
SYRACUSE UNIV,DEPT CHEM ENGN & MAT SCI,SYRACUSE,NY 13244
来源
:
VACUUM
|
1990年
/ 41卷
/ 4-6期
关键词
:
D O I
:
10.1016/0042-207X(90)93981-N
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
An in situ transmission electron microscopy (TEM) method has been devised for the measurement of electrical resistance as a function of temperature and/or time for thin film stripes. A custom TEM sample holder was fabricated through which up to eight leads may be passed. These leads provide currents to the heater and allow for the measurement of hot stage temperature and the electrical resistance of the sample. This configuration enables one to correlate changes in resistance of the stripe during electromigration experiments to the microstructural changes occurring at the same time. The time-dependent microstructural phenomena are recorded with a camcorder on video tape, a capability which greatly enhances the subsequent data analysis. Preliminary experiments have been performed using the Temperature-ramp Resistance Analysis to Characterize Electromigration (TRACE) method in order to determine the kinetic parameters for electromigration for pure aluminum films. © 1990.
引用
收藏
页码:1434 / 1436
页数:3
相关论文
共 8 条
[1]
ELECTROMIGRATION IN THIN AL FILMS
BLECH, IA
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor, Research and Development Laboratory, Palo Alto
BLECH, IA
MEIERAN, ES
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor, Research and Development Laboratory, Palo Alto
MEIERAN, ES
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(02)
: 485
-
&
[2]
THERMALLY INDUCED HILLOCK FORMATION IN AL-CU FILMS
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
VOOK, RW
论文数:
0
引用数:
0
h-index:
0
VOOK, RW
[J].
JOURNAL OF MATERIALS RESEARCH,
1989,
4
(05)
: 1172
-
1181
[3]
ACTIVATION-ENERGY FOR ELECTROTRANSPORT IN THIN ALUMINUM FILMS BY RESISTANCE MEASUREMENTS
HUMMEL, RE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
HUMMEL, RE
DEHOFF, RT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
DEHOFF, RT
GEIER, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
GEIER, HJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1976,
37
(01)
: 73
-
80
[4]
CURRENT-INDUCED MARKER MOTION IN GOLD WIRES
HUNTINGTON, HB
论文数:
0
引用数:
0
h-index:
0
HUNTINGTON, HB
GRONE, AR
论文数:
0
引用数:
0
h-index:
0
GRONE, AR
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1961,
20
(1-2)
: 76
-
87
[5]
TEMPERATURE-RAMP RESISTANCE ANALYSIS TO CHARACTERIZE ELECTROMIGRATION
PASCO, RW
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT CHEM ENGN & MAT SCI,SYRACUSE,NY 13210
SYRACUSE UNIV,DEPT CHEM ENGN & MAT SCI,SYRACUSE,NY 13210
PASCO, RW
SCHWARZ, JA
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT CHEM ENGN & MAT SCI,SYRACUSE,NY 13210
SYRACUSE UNIV,DEPT CHEM ENGN & MAT SCI,SYRACUSE,NY 13210
SCHWARZ, JA
[J].
SOLID-STATE ELECTRONICS,
1983,
26
(05)
: 445
-
452
[6]
RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMS
ROSENBERG, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Watson Research Center, Yorktown Heights
ROSENBERG, R
BERENBAUM, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Watson Research Center, Yorktown Heights
BERENBAUM, L
[J].
APPLIED PHYSICS LETTERS,
1968,
12
(05)
: 201
-
+
[7]
COMBINED RESISTANCE AND TEMPERATURE-CHANGE MEASUREMENT FOR THE STUDY OF ELECTROMIGRATION
SATO, K
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
SATO, K
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
CHANG, CY
PATRINOS, A
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
PATRINOS, A
VOOK, RW
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
VOOK, RW
SCHWARZ, JA
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
SCHWARZ, JA
[J].
VACUUM,
1990,
41
(4-6)
: 1229
-
1230
[8]
SATO K, 1989, UNPUB
←
1
→
共 8 条
[1]
ELECTROMIGRATION IN THIN AL FILMS
BLECH, IA
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor, Research and Development Laboratory, Palo Alto
BLECH, IA
MEIERAN, ES
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor, Research and Development Laboratory, Palo Alto
MEIERAN, ES
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(02)
: 485
-
&
[2]
THERMALLY INDUCED HILLOCK FORMATION IN AL-CU FILMS
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
CHANG, CY
VOOK, RW
论文数:
0
引用数:
0
h-index:
0
VOOK, RW
[J].
JOURNAL OF MATERIALS RESEARCH,
1989,
4
(05)
: 1172
-
1181
[3]
ACTIVATION-ENERGY FOR ELECTROTRANSPORT IN THIN ALUMINUM FILMS BY RESISTANCE MEASUREMENTS
HUMMEL, RE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
HUMMEL, RE
DEHOFF, RT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
DEHOFF, RT
GEIER, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
GEIER, HJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1976,
37
(01)
: 73
-
80
[4]
CURRENT-INDUCED MARKER MOTION IN GOLD WIRES
HUNTINGTON, HB
论文数:
0
引用数:
0
h-index:
0
HUNTINGTON, HB
GRONE, AR
论文数:
0
引用数:
0
h-index:
0
GRONE, AR
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1961,
20
(1-2)
: 76
-
87
[5]
TEMPERATURE-RAMP RESISTANCE ANALYSIS TO CHARACTERIZE ELECTROMIGRATION
PASCO, RW
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT CHEM ENGN & MAT SCI,SYRACUSE,NY 13210
SYRACUSE UNIV,DEPT CHEM ENGN & MAT SCI,SYRACUSE,NY 13210
PASCO, RW
SCHWARZ, JA
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT CHEM ENGN & MAT SCI,SYRACUSE,NY 13210
SYRACUSE UNIV,DEPT CHEM ENGN & MAT SCI,SYRACUSE,NY 13210
SCHWARZ, JA
[J].
SOLID-STATE ELECTRONICS,
1983,
26
(05)
: 445
-
452
[6]
RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMS
ROSENBERG, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Watson Research Center, Yorktown Heights
ROSENBERG, R
BERENBAUM, L
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Watson Research Center, Yorktown Heights
BERENBAUM, L
[J].
APPLIED PHYSICS LETTERS,
1968,
12
(05)
: 201
-
+
[7]
COMBINED RESISTANCE AND TEMPERATURE-CHANGE MEASUREMENT FOR THE STUDY OF ELECTROMIGRATION
SATO, K
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
SATO, K
CHANG, CY
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
CHANG, CY
PATRINOS, A
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
PATRINOS, A
VOOK, RW
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
VOOK, RW
SCHWARZ, JA
论文数:
0
引用数:
0
h-index:
0
机构:
SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13244
SCHWARZ, JA
[J].
VACUUM,
1990,
41
(4-6)
: 1229
-
1230
[8]
SATO K, 1989, UNPUB
←
1
→