POLYCRYSTALLINE-SILICON INTEGRATED PHOTOCONDUCTORS FOR PICOSECOND PULSING AND GATING

被引：12

作者：

BOWMAN, DR

HAMMOND, RB

DUTTON, RW

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

[2] UNIV CALIF LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期

关键词：

D O I：

10.1109/EDL.1985.26209

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：502 / 504

页数：3

共 9 条

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HAMMOND, RB ;

DUTTON, RW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :364-369

[3] INTEGRATED SILICON PHOTOCONDUCTORS FOR PICOSECOND PULSING AND GATING [J].

EISENSTADT, WR ;

HAMMOND, RB ;

DUTTON, RW .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :296-299

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[5]

GOOSSEN KW, UNPUB IEEE T MICROWA

[6]

HAMMOND RB, 1985, UNPUB J APPL PHYS

[7] PICOSECOND-DOMAIN WAVEFORM MEASUREMENTS [J].

NAHMAN, NS .

PROCEEDINGS OF THE IEEE, 1978, 66 (04) :441-454

[8] PICOSECOND-DOMAIN WAVEFORM MEASUREMENT - STATUS AND FUTURE-DIRECTIONS [J].

NAHMAN, NS .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1983, 32 (01) :117-124

[9] PICOSECOND PHOTOCONDUCTIVITY IN RADIATION-DAMAGED SILICON-ON-SAPPHIRE FILMS [J].

SMITH, PR ;

AUSTON, DH ;

JOHNSON, AM ;

AUGUSTYNIAK, WM .

APPLIED PHYSICS LETTERS, 1981, 38 (01) :47-50

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