SILICON AMORPHIZATION DURING ION-IMPLANTATION AS A THERMAL PHENOMENON

被引：26

作者：

CEROFOLINI, GF

MEDA, L

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.36.5131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5131 / 5137

页数：7

共 30 条

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