AR ION LASER IRRADIATION EFFECTS ON THE MOVPE GROWTH OF ZNSE USING DIMETHYL ZINC AND HYDROGEN SELENIDE AS REACTANTS

In order to understand the growth mechanism for the photoassisted metalorganic vapor phase epitaxy (MOVPE) of ZnSe, effects of photoirradiation on the MOVPE growth of ZnSe using hydrogen selenide (H2Se) as an alternative Se source to dimethyl selenide (DMSe) have been investigated, and the comparison of the results obtained for both cases has been made. It has been found in the case using H2Se that photoinduced excess carriers in the ZnSe layer can contribute to the growth rate enhancement as in the case when using DMSe. Considering that there exists a remarkable difference between both cases in the temperature region where the photoirradiation is effective for the growth rate enhancement, it has been concluded that the dissociation of H2Se molecules is initiated by photocatalysis. This idea is supported by the results of photoluminescence properties of ZnSe films grown by photoassisted MOVPE.